Ashutosh Mishra

Publications

IJRFMCAE2022

Multilayer Perceptron-Random Forest Based Hybrid Machine Learning-Neural Network Model for GaN High Electron Mobility Transistor's Parameter Estimations

Ashutosh Mishra, Samriddhi Raut, Khushwant Sehra, Raghvendra Pratap Singh, Shweta Wadhera, Poonam Kasturi, Geetika Jain Saxena, Manoj Saxena

International Journal of RF and Microwave Computer-Aided Engineering

A hybrid multilayer-perceptron and random-forest model for estimating GaN HEMT device parameters. From my earlier semiconductor device modelling work at the University of Delhi.

doi:10.1002/mmce.23191

Cite this

IEEE

A. Mishra, S. Raut, K. Sehra, R. P. Singh, S. Wadhera, P. Kasturi, et al., "Multilayer Perceptron-Random Forest Based Hybrid Machine Learning-Neural Network Model for GaN High Electron Mobility Transistor's Parameter Estimations," International Journal of RF and Microwave Computer-Aided Engineering, 2022. doi: 10.1002/mmce.23191.

BibTeX
@article{mishra2022multilayer,
  author  = {Ashutosh Mishra and Samriddhi Raut and Khushwant Sehra and Raghvendra Pratap Singh and Shweta Wadhera and Poonam Kasturi and Geetika Jain Saxena and Manoj Saxena},
  title   = {{Multilayer Perceptron-Random Forest Based Hybrid Machine Learning-Neural Network Model for GaN High Electron Mobility Transistor's Parameter Estimations}},
  journal = {International Journal of RF and Microwave Computer-Aided Engineering},
  year    = {2022},
  doi     = {10.1002/mmce.23191}
}

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